Model/Brand/Package
Category/Description
Inventory
Price
Data
-
![]()
Category: Bipolar transistorDescription: High power NPN epitaxial planar bipolar transistor14625+$21.434450+$20.5184200+$20.0054500+$19.87721000+$19.74902500+$19.60245000+$19.51087500+$19.4192 -
![]()
Category: IGBTtransistorDescription: IGBT Transistor 600V/80A/2.0V48411+$90.675210+$86.7328100+$86.0232250+$85.4712500+$84.60391000+$84.20972500+$83.65775000+$83.1846 -
![]()
Category: IGBTtransistorDescription: SGL50N60RUFDSeries 600 V 80A flange installation short-circuit rated IGBT TO-26412321+$49.994410+$47.1259100+$44.9949250+$44.6671500+$44.33931000+$43.97052500+$43.64265000+$43.4377 -
![]()
Category: Classification of electronic componentsDescription: Trans IGBT Chip N-CH 1500V 40A 200000mW 3-Pin(3+Tab) TO-264 Rail84541+$565.036410+$550.296350+$538.9956100+$535.0649200+$532.1169500+$528.18621000+$525.72952000+$523.2728 -
![]()
Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1500V 40A 200000mW 3Pin(3+Tab) TO-264 Rail46771+$97.444110+$93.2074100+$92.4448250+$91.8517500+$90.91961000+$90.49592500+$89.90285000+$89.3944 -
![]()
Category: Bipolar transistorDescription: ON SEMICONDUCTOR MJL3281AG Single transistor bipolar, audio, NPN, 260 V, 30 MHz, 200 W, 15 A, 175 hFE55055+$19.867850+$19.0187200+$18.5433500+$18.42441000+$18.30552500+$18.16975000+$18.08487500+$17.9999 -
![]()
Category: Bipolar transistorDescription: 15Ampere complementary silicon power transistor 260 VOLTS 200 W 15 AMPERES Complementary Silicone POWER TRANSISTORS 260 VOLTS 200 WATTS982010+$8.7084100+$8.2730500+$7.98271000+$7.96822000+$7.91015000+$7.83767500+$7.779510000+$7.7505 -
![]()
Category: resistanceDescription: 51Ω ±5% 85W ±50ppm/℃64401+$57.969510+$54.6434100+$52.1726250+$51.7924500+$51.41231000+$50.98472500+$50.60455000+$50.3670 -
![]()
Category: resistanceDescription: 5.1Ω ±5% 85W ±100ppm/℃71351+$57.969510+$54.6434100+$52.1726250+$51.7924500+$51.41231000+$50.98472500+$50.60455000+$50.3670 -
![]()
Category: resistanceDescription: 10Ω ±5% 85W ±50ppm/℃48505+$29.922850+$28.6440200+$27.9279500+$27.74891000+$27.56992500+$27.36535000+$27.23747500+$27.1095 -
![]()
Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 3000V 130A 625000mW 3Pin(3+Tab) TO-26431351+$777.204110+$749.933850+$746.5250100+$743.1162150+$737.6622250+$732.8899500+$728.11751000+$722.6635 -
![]()
Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1500V 40A 200000mW 3Pin(3+Tab) TO-264 Rail3780 -
![]()
Category: resistanceDescription: 10kΩ ±5% 85W ±50ppm/℃66391+$86.687010+$82.9180100+$82.2396250+$81.7119500+$80.88271000+$80.50582500+$79.97825000+$79.5259 -
![]()
Category: MOSpipeDescription: N-Channel Power MOSFET, IXYS Linear series N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability. ### MOSFET Transistors, a series of advanced discrete power MOSFET devices from IXYS78201+$310.648410+$302.544550+$296.3315100+$294.1705200+$292.5497500+$290.38871000+$289.03802000+$287.6874 -
![]()
Category: IGBTtransistorDescription: IGBT Discrete components, IXYS XPT series XPT of IXYS ™ The series of discrete IGBT components adopts ultra light through-hole thin chip technology, which can reduce thermal resistance and energy loss. These devices provide fast switching time, low tail line current, and offer various industry standards and proprietary packaging. High power density and low VCE (sat) square reverse bias safe working area (RBSOA) up to rated breakdown voltage short-circuit capacity, ensuring a forward on voltage temperature coefficient of 10usec optional Co Pack Sonic FRD ™ Or HiPerFRED ™ International standards for diodes and proprietary high-voltage packaging # # IGBT discrete components and modules, IXYS insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.92621+$159.227910+$155.074150+$151.8895100+$150.7819200+$149.9511500+$148.84341000+$148.15112000+$147.4588 -
![]()
Category: IGBTtransistorDescription: IXXK Series GenX4 650 V 290 A flange mounted IGBT - TO-26473561+$72.783510+$69.6190100+$69.0494250+$68.6064500+$67.91021000+$67.59372500+$67.15075000+$66.7710 -
![]()
Category: MOSpipeDescription: TO-264 N-CH 40V 600A39441+$174.574610+$170.020550+$166.5290100+$165.3146200+$164.4037500+$163.18931000+$162.43032000+$161.6713 -
![]()
Category: MOSpipeDescription: TO-264 N-CH 55V 550A94761+$165.073310+$160.767050+$157.4656100+$156.3172200+$155.4560500+$154.30771000+$153.58992000+$152.8722 -
![]()
Category: MOSpipeDescription: TO-264AA N-CH 150V 90A42291+$129.565910+$126.185950+$123.5946100+$122.6933200+$122.0173500+$121.11601000+$120.55262000+$119.9893 -
![]()
Category: MOSpipeDescription: IXTK Series Single N-channel 250 V 33 mOhm 960 W Power MOSFET - TO-26431341+$194.055610+$188.993350+$185.1122100+$183.7622200+$182.7498500+$181.39981000+$180.55612000+$179.7124 -
![]()
Category: MOSpipeDescription: Trans MOSFET N-CH 100V 250A 3Pin(3+Tab) TO-264AA18341+$88.390210+$84.5471100+$83.8554250+$83.3173500+$82.47191000+$82.08752500+$81.54955000+$81.0884 -
![]()
Category: MOSpipeDescription: TO-264P-CH 200V 90A58751+$128.458510+$125.107450+$122.5382100+$121.6446200+$120.9743500+$120.08071000+$119.52222000+$118.9637 -
![]()
Category: MOSpipeDescription: NChannel 250V 100A31235+$24.512750+$23.4651200+$22.8785500+$22.73181000+$22.58522500+$22.41765000+$22.31287500+$22.2081 -
![]()
Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 75A 300000mW 3Pin(3+Tab) TO-264AA6873
